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NTE2708 Integrated Circuit
NMOS, 8K UV EPROM, 450ns
Description: The NTE2708 is an ultra-violet light-erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8-bit length. This device is fabricated using N-channel silicon- gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by Series 74 TTL circuits without the use of external pull-up resistors. Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The data outputs for the NTE2708 are three-state for OR tying multiple devices on a common bus. This EPROM is designed for high-density fixed memory applications where fast turn arounds and/or program changes are required. This device is designed for operation from 0 to +70C and is supplied in a 24-Lead DIP package for insertion in mounting-hole rows on 600-mil (15.2 mm) centers. Features: D 1024 X 8 Organization D All Inputs and Outputs Fully TTL Compatible D Static Operation (No Clocks, No Refresh) D Performance Ranges: Max Access: 450ns Min Cycle: 450ns D 3-State Outputs for OR-Ties D 8-Bit Output D Plug-Compatible Pin-Outs Allowing Interchangeability Absolute Maximum Ratings: (TA = 0 to +70C, Note 1 unless otherwise specified) Supply Voltage, VCC (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +15V Supply Voltage, VDD (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +20V Supply Voltage, VSS (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +15V All Input Voltage (except program) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +20V Program Input (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +35V Output Voltage (operating, with respect to VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2 to +7V Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0C to 70C Storage temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to 125C Note 1. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permenant damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions" section of this specification is not implied. Exposure to absolute-maximum- rated conditions for extended periods may affect device reliability. Note 2. Under absolute maximum ratings, voltage values are with respect to the most-negative supply voltage, VBB (substrate), unless otherwise noted. Throughout the remainder of this data sheet, voltage values are with respect to VSS.
Operation (Read Mode): Address (A0-A9) The address-valid interval determines the device cycle time. The 10-bit positive-logic address is decoded on-chip to select one of the 1024 words of 8-bit length in the memory array. A0 is the least- significant bit and A9 is the most-significant bit of the words address. Chip Select, Program Enable [CS (PE)] When the chip select is low, all eight outputs are enabled and the eight-bit addressed word can be read. When the chip select is high, all eight outputs are in a high-impedance state. Data Out (Q1-Q8) The chip must be selected before the eight-bit outputs word can be read. Data will remain valid until the address is changed or the chip is deselected. When deselected, the three-state outputs are in a high-impedance state. The outputs will drive TTL circuits without external components. Program The program pin must be held below VCC in the read mode. Operation (Program Mode): Erase Before programming, the NTE2708 is erased by exposing the chip through the transparent lid to high- intensity ultraviolet light (wavelength 2537 angstroms). The recommended minimum exposure dose (= UV intensity x exposure time) is fifteen watt-seconds per square centimeter. Thus, a typical 12 milliwatt per square centimeter, filterless UV lamp will erase the device in a minimum of 21 minutes. The lamp should be located about 2.5 centimeters above the chip during erasure. After erasure, all bits are in the "1" state. Programming Programming consists of successively depositing a small amount of charge to a selected memory cell that is to be changed from the erased high state to the low state. A low can be changed to a high only by erasure. Programming is normally accomplished on a PROM or EPROM Programmer. Programming must be done at room temperature (+25C) only. To Start Programming First bring the CS (PE) pin to +12V to disable the outputs and convert them to inputs. This pin is held high for the duration of the programming sequence. The first word to be programmed is addressed (it is customary to begin with the "0" address) and the data to be stored is placed on the Q1-Q8 program inputs. Then a +25V program pulse is applied to the program pin. After 0.1 to 1.0 milliseconds the program pin is brought back to 0V. After at least one microsecond the word address is sequentially changed to the next location, the new data is set up and the program pulse is applied. Programming continues in this manner until all words have been programmed. This constitutes one of N program loop. The entire sequence is then repeated N times with N x tw(PR) 100 ms. Thus, if tw(PR) = 1 ms; then N = 100, the minimum number of program loops required to program the EPROM. To Stop Programming After cycling through the N program loops, the last program pulse is brought to 0V, then Program Enable [CS (PE)] is brought to VIL which takes the device out of the program mode. The data supplied by the programmer must be removed before the address is changed since the program inputs are now data outputs and change of address could cause a voltage conflict on the output buffer. Q1-Q8 outputs are invalid up to 10 microseconds after the program enable pin is brought from VIH(PE) to VIL.
Recommended Operating Conditions:
Parameter Supply Voltage Symbol VBB VCC VDD VSS High-Level Input Voltage (Except Program & Program Enable) High-Level Program Enable Input Voltage High-Level Program Input Voltage Low-Level Input Voltage (Except Program) Low-Level Program Input Voltage VIL(PR) max VIH(PR) -25V High-Level Program Pulse Input Current (Sink) Low-Level Program Pulse Input Current (Source) Operating Free-Air Temperature VIH VIH(PE) VIH(PR) VIL VIL(PR) IIH(PR) IIL(PR) TA Min -4.75 4.75 11.4 - 2.4 11.4 25 VSS VSS - - 0 Nom -5 5 12 0 - 12 26 - - - - - Max -5.25 5.25 12.6 - VCC+1 12.6 27 0.65 1 40 3 70 Unit V V V V V V V V V mA mA C
Electrical Characteristics: (TA = 0 to +70C, Note 3 unless otherwise specified)
Parameter High-level Output Voltage Low-level Output Voltage Input Current (Leakage) Output Current (Leakage) Supply Current from VBB Supply Current from VCC Supply Current from VDD Power Dissipation Symbol VOH VOL II IO IBB ICC IDD PD(AV) Test Conditions IOH = -100A IOH = -1mA IOL = 1.6mA CS(PE) = 5V TA = 70C All Inputs High, CS(PE) = 5V, TA = 0C (Worst Case) Min 3.7 2.4 - - - - - - Typ - - - 1 30 6 50 - Max Unit - - 0.45 10 45 10 65 800 V V A A mA mA mA mW
Note 3. All typical values are at TA = 25C and nominal voltages. Capacitance: (TA = 0 to +70C, f = 1MHZ, Note 3 unless otherwise specified)
Parameter Input Capacitance Output Capacitance Symbol CI CO Min - - Typ 4 8 Max 6 12 Unit pF pF
Note 3. All typical values are at TA = 25C and nominal voltages. Switching Characteristics: (TA = 0 to +70C unless otherwise specified)
Parameter Access Time from Address Access Time from CS Output Invalid from Address Change Output Disable Time (Note 4) Read Cycle Time Test Conditions CL = 100 pF, 1 Series 74 TTL load, tf(CS), tf(ad) = 20ns Min - - 0 0 450 Typ - - - - - Max 450 120 - 120 - Unit ns ns ns ns ns
Note 4. Value calculated from 0.5 volt delta to measured output level.
TA = +25C Program Characteristics Over Recommended Supply Voltage Range:
Parameter Pulse Width, Program Pulse Transition Times (Except Program Pulse) Transition Times, Program Pulse Address Setup Time Data Setup Time Program Enable Setup Time Address Hold Time Address Hold Time after Program Input Data Stopped Data Hold Time Program Enable Hold Time Delay Time, CS (PE) Low to Address Change Pin Connection Diagram A7 1 A6 2 A5 3 A4 4 A3 5 A2 6 A1 7 A0 8 Q1 9 Q2 10 Q3 11 VSS 12 1.290 (32.76) Max 24 13 .520 (13.2) 1 12 .280 (7.11) Dia UV Window Glass Sealant .160 (4.06) Max .200 (5.08) Max 24 VCC 23 A8 22 A9 21 VBB 20 CS/(PE) 19 VDD 18 PROGRAM 17 Q8 16 Q7 15 Q6 14 Q5 13 Q4 .600 (15.24) Max Glass Symbol tw(PR) tT tT(PR) tsu(ad) tsu(da) tsu(PE) th(ad) th(ad, da R) th(da) th(PE) tCL, adX Min 0.1 - 50 10 10 10 1000 0 1000 500 0 Typ - - - - - - - - - - - Max 1.0 20 2000 - - - - - - - - Unit ms ns ns s s s ns ns ns ns ns
.100 (2.54)
.125 (3.17)
.670 (17.02)

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